t o - 2 2 0 a c nxpsc10650 silicon carbide diode 4 may 2015 product data sheet scan or click this qr code to view the latest information for this product 1. general description silicon carbide schottky diode in a sod59a (to-220ac) plastic package, designed for high frequency switched-mode power supplies. 2. features and benefits ? highly stable switching performance ? high forward surge capability i fsm ? extremely fast reverse recovery time ? superior in efficiency to silicon diode alternatives ? reduced losses in associated mosfet ? reduced emi ? reduced cooling requirements ? rohs compliant 3. applications ? power factor correction ? telecom/server smps ? ups ? pv inverter ? pc silverbox ? led/oled tv ? motor drives 4. quick reference data table 1. quick reference data symbol parameter conditions min typ max unit v rrm repetitive peak reverse voltage - - 650 v i f(av) average forward current = 0.5; t mb 112 c; square-wave pulse; fig. 1 ; fig. 2 - - 10 a t j junction temperature - - 175 c static characteristics v f forward voltage i f = 10 a; t j = 25 c; fig. 4 - 1.5 1.7 v
nxp semiconductors nxpsc10650 silicon carbide diode nxpsc10650 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights reserved product data sheet 4 may 2015 2 / 9 symbol parameter conditions min typ max unit dynamic characteristics q r recovered charge i f = 10 a; v r = 400 v; di f /dt = 500 a/ s; t j = 25 c; fig. 5 - 15 - nc 5. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 k cathode 2 a anode mb mb mounting base; connected to cathode m b 1 2 to-220ac (sod59a) a 0 0 1 a a a 0 2 0 k 6. ordering information table 3. ordering information package type number name description version nxpsc10650 to-220ac plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead to-220ac sod59a 7. marking table 4. marking codes type number marking code nxpsc10650 nxpsc10650
nxp semiconductors nxpsc10650 silicon carbide diode nxpsc10650 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights reserved product data sheet 4 may 2015 3 / 9 8. limiting values table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v rrm repetitive peak reverse voltage - 650 v v rwm crest working reverse voltage - 650 v v r reverse voltage dc - 650 v i f(av) average forward current = 0.5; t mb 112 c; square-wave pulse; fig. 1 ; fig. 2 - 10 a i frm repetitive peak forward current = 0.5; t p = 25 s; t mb 112 c; square-wave pulse - 20 a t p = 10 ms; t j(init) = 25 c; sine-wave pulse - 50 a i fsm non-repetitive peak forward current t p = 10 s; t j(init) = 25 c; square-wave pulse - 450 a t stg storage temperature -55 175 c t j junction temperature - 175 c i f(a v ) (a) 0 1 6 1 2 4 8 aaa-017109 2 0 1 0 3 0 4 0 p tot (w) 0 = 1 0 . 5 0 . 2 0 . 1 i f(av) = i f(rms) ? v o = 0.701 v; r s = 0.131 ? fig. 1. forward power dissipation as a function of average forward current; square waveform; maximum values t m b ( c ) -50 200 150 5 0 100 0 aaa-0171 1 0 4 8 1 2 i f(a v ) (a) 0 1 1 2 c fig. 2. forward current as a function of mounting base temperature; maximum values
nxp semiconductors nxpsc10650 silicon carbide diode nxpsc10650 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights reserved product data sheet 4 may 2015 4 / 9 9. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base fig. 3 - - 1.9 k/w r th(j-a) thermal resistance from junction to ambient in free air - 60 - k/w aaa-0171 1 1 t p (s) 1 0 - 6 1 1 0 1 0 - 1 1 0 - 2 1 0 - 5 1 0 - 3 1 0 - 4 1 1 0 - 1 1 0 z t h(j-mb) (k/w) 1 0 - 2 t p t p t p t t = = 0.5 = 0.3 = 0.1 = 0.05 = 0.02 = 0.01 single pulse fig. 3. transient thermal impedance from junction to mounting base as a function of pulse duration
nxp semiconductors nxpsc10650 silicon carbide diode nxpsc10650 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights reserved product data sheet 4 may 2015 5 / 9 10. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics i f = 10 a; t j = 25 c; fig. 4 - 1.5 1.7 v v f forward voltage i f = 10 a; t j = 150 c; fig. 4 - 1.8 2.1 v v r = 650 v; t j = 25 c - - 250 a i r reverse current v r = 650 v; t j = 150 c - - 800 a dynamic characteristics q r recovered charge i f = 10 a; di f /dt = 500 a/s; v r = 400 v; t j = 25 c; fig. 5 - 15 - nc f = 1 mhz; v r = 1 v; t j = 25 c - 300 - pf f = 1 mhz; v r = 300 v; t j = 25 c - 34 - pf c d diode capacitance f = 1 mhz; v r = 600 v; t j = 25 c - 28 - pf v f (v) 0 4 3 1 2 aaa-0171 1 2 8 1 2 4 1 6 2 0 i f (a) 0 (1) (2) (3) (4) v o = 0.701 v; r s = 0.131 ? (1) t j = 25 c; typical values (2) t j = 100 c; typical values (3) t j = 150 c; typical values (4) t j = 175 c; typical values fig. 4. forward current as a function of forward voltage; typical values t j (c) 0 175 150 5 0 100 aaa-017140 8 4 1 2 1 6 q r (nc) 0 fig. 5. recovered charge as a function of junction temperature
nxp semiconductors nxpsc10650 silicon carbide diode nxpsc10650 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights reserved product data sheet 4 may 2015 6 / 9 11. package outline references outline version european projection issue date iec jedec jeit a sod59a t o - 2 2 0 a c ( 2 - l e a d ) sod059a_po 15-03-24 15-03-30 unit m m max nom min 4.7 4.3 1.40 1.15 1.70 1.17 0.65 0.45 15.8 15.6 6.8 6.4 5.08 (ref) 6.9 (ref) 16.25 15.70 3.80 3.53 a dimensions: (mm are the original dimensions) note 1. protruded dambar are included in the dimension. plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead t o-220ac sod59a a 1 b 0.95 0.70 b 1 (1) c d d 1 v 8.1 7.9 e 1 e 10.30 9.65 e h l 15.0 12.5 p q 2.6 2.2 q 2.95 2.65 0 5 10 mm scale a 1 q a e 1 e p c e v q d 1 d h b 1 b l fig. 6. package outline to-220ac (sod59a)
nxp semiconductors nxpsc10650 silicon carbide diode nxpsc10650 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights reserved product data sheet 4 may 2015 7 / 9 12. legal information 12.1 data sheet status document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objective specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification. [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". 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nxp semiconductors nxpsc10650 silicon carbide diode nxpsc10650 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights reserved product data sheet 4 may 2015 9 / 9 13. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 quick reference data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 pinning information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 8 limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 9 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 10 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 11 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 12 legal information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 ? nxp semiconductors n.v. 2015. all rights reserved for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 4 may 2015
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